RF Power Device Engineer

Functieomschrijving

• Implement the physical design (layout) of transistors populating multi- and single-project wafers in close cooperation with RF designers.
• Be accountable for the thermal assessment of RF dies and discrete components by means of simulations validated against thermal measurements.
• Contribute to the electro-thermal modeling of transistors. This task entails the electrical characterization of the designed parts, and the generation and validation of their corresponding compact models.

Functie-eisen

• A university degree (MSc or PhD) in Electrical Engineering or equivalent with strong academic foundation on radio frequency fundamentals.
• Deep knowledge of the working principles of GaN-based transistors.
• 5 to 10 years of professional experience in RF engineering of GaN devices is a premium.
• Experience in physical design of RF power transistors. Working knowledge of layout andsimulation tools such as Keysight ADS suite or equivalent.
• Familiarity with thermal simulation software such as ANSYS, SYMMIC or equivalent. Willingnessto learn is required in case of lack of experience with thermal simulations.
• Some experience with DC and RF characterization techniques (pulsed IV, s-par, load-pull).
• Strong communication and interpersonal skills to interact with multicultural colleagues.
• Curiosity and determination to acquire the necessary knowledge and skills to accomplish unfamiliar tasks.
• Desire to be part of a winning team with no nine-to-five mentality.
• Proficient in English language.