RF Power Device Engineer




The RF power device engineer will take responsibility for various tasks related to the physical design, modeling and characterization of RF power devices, mostly GaN-based transistors, in close working with technology and design experts. The aim is that of developing state of the art devices suitable for various application domains.



  • Implement the physical design (layout) of transistors populating multi- and single-project wafers in close cooperation with RF designers.
  • Be accountable for the thermal assessment of RF dies and discrete components by means of simulations validated against thermal measurements.
  • Contribute to the electro-thermal modeling of transistors. This task entails the electrical characterization of the designed parts, and the generation and validation of their corresponding compact models.


  • A university degree (MSc or PhD) in Electrical Engineering or equivalent with strong academic foundation on radio frequency fundamentals.
  • Deep knowledge of the working principles of GaN-based transistors.
  • 5 to 10 years of professional experience in RF engineering of GaN devices is a premium.
  • Experience in physical design of RF power transistors. Working knowledge of layout andsimulation tools such as Keysight ADS suite or equivalent.
  • Familiarity with thermal simulation software such as ANSYS, SYMMIC or equivalent. Willingnessto learn is required in case of lack of experience with thermal simulations.
  • Some experience with DC and RF characterization techniques (pulsed IV, s-par, load-pull).
  • Strong communication and interpersonal skills to interact with multicultural colleagues.
  • Curiosity and determination to acquire the necessary knowledge and skills to accomplish unfamiliar tasks.
  • Desire to be part of a winning team with no nine-to-five mentality.
  • Proficient in English language.

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